A study of grain growth during sintering of monolithic nanosized tungsten carbide

Materials Science and Technology

Volumn 3, Issue , 2005, Pages 23-29

  Wang, X ^a   Fang, Z Zak ^a   Sohn, H Y ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

Densification; Grain growth; Nanocrystalline powder; Sintering; Tungsten carbide

Indexed keywords

COALESCENCE; DENSIFICATION; ELECTRON MICROSCOPES; INTERFACIAL ENERGY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SINTERING; TUNGSTEN CARBIDE;

EQUALAXIAL; MULTI FACETED SURFACES; SINTERED POWDERS; TRIANGULAR PRISM PLATELETS;

GRAIN GROWTH;

EID: 33845525781     PISSN: 15462498     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. . Hyoing R Lee, Deug J Kim, "Role of vanadium carbide additive during sintering of WC-Co: Mechanism of grain growth inhibition," J. Amer. Ceram. Soc., 86 (1) (2003), 152-154.
2. A Jaroenworaluck, T Yamamoto, Y Ikuhara, T Sakuma, "Segregation of vanadium at the WC/Co interface in VC-doped WC-Co," J. Materials Research, 13 (9) (1998), 2450-2452.
3. Osung Seo, Shinhoo Kang, Enrique J Lavernia, "Growth inhibition of nano WC particles in WC-Co alloys during liquid-phase sintering," Materials Transactions, 44 (11) (2003), 2339-2345.
4. I Azcona, A Ordonez, J M Sanchez, F Castro, "Hot isostatic pressing of ultrafine tungsten carbide -cobalt hardmetals," J. Materials Sci., 37 (2002), 4189-4195.
5. Z Fang, P Maheshwari, X Wang, H Y Sohn, A Griffo, and R Riley, "An experimental study of the sintering of nanocrystalline WC-Co powders," Int. J. Refractory Metals & Hard Materials, in press.
6. x-WC interface," Interface Science 12 (2004), 187-195.