Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Benaissa, M ^a   Vennegues P ^b   Tottereau, O ^b   Nguyen, L ^b   Semond, F ^b  

^a NATIONAL CENTER FOR SCIENTIFIC AND TECHNICAL RESEARCH   (Morocco)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DRAGGING; GAN QUANTUM DOTS; STEP BUNCHING MECHANISM; SUBSTRATE VICINALITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845447456     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399940     Document Type: Article

References (20)

1. P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, Lidong Zhang, E. Hu, and A. Imamoglu, Science 290, 2282 (2000).
2. J. N. Farahani, D. W. Pohl, H.-J. Eisler, and B. Hecht, Phys. Rev. Lett. 95, 017402 (2005).
3. S. Kako, K. Hoshino, S. Iwamoto, S. Ishida, and Y. Arakawa, Appl. Phys. Lett. 85, 64 (2004).
4. C. Santori, S. Götzinger, Y. Yamamoto, S. Kako, K. Hoshino, and Y. Arakawa, Appl. Phys. Lett. 87, 051916 (2005).
5. S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story (Springer, Berlin, 2000), p. 129.
6. Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, and S. Nakamura, Phys. Rev. B 55, R1938 (1997).
7. M. Leroux, in Mat́riaux Semi-conducteurs III-V, II-VI et Nitrures Pour L'optólectronique, edited by, G. Roosen, (Hermes Science, Paris, 2003), Chap., p. 169, and references included.
8. J. L. Rouvìre, J. Simon, N. Pelekanos, B. Daudin, and G. Feuillet, Appl. Phys. Lett. 75, 2632 (1999).
9. X. Q. Shen, H. Okumura, and H. Matsuhata, Appl. Phys. Lett. 87, 101910 (2005).
10. F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. V́zian, and J. Massies, Phys. Status Solidi A 188, 501 (2001).
11. J. Tersoff, Y. H. Phang, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.75.2730 75, 2730 (1995); F. Liu, J. Tersoff, and M. G. Lagally, Phys. Rev. Lett. 80, 1268 (1998).
12. J. Tersoff, Y. H. Phang, Z. Zhang, and M. G. Lagally, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.75.2730 75, 2730 (1995); F. Liu, J. Tersoff, and M. G. Lagally, Phys. Rev. Lett. 80, 1268 (1998).
13. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, Boston, 1993), Chap., p. 199.
14. M. V. Ramana Murty, P. Fini, G. B. Stephenson, Carol Thompson, J. A. Eastman, A. Munkholm, O. Auciello, R. Jothilingam, S. P. DenBaars, and J. S. Speck, Phys. Rev. B 62, R10661 (2000).
15. J. Brault, S. Tanaka, E. Sarigiannidou, J.-L. Rouvìre, B. Daudin, G. Feuillet, and H. Nakagawa, J. Appl. Phys. 93, 3108 (2003).
16. J. Bai, M. Dudley, W. H. Sun, H. M. Wang, and A. Khan, Appl. Phys. Lett. 88, 051903 (2006).
17. H. Lahr̀che, P. Venńgùs, B. Beaumont, and P. Gibart, J. Cryst. Growth 205, 245 (1999).
18. P. Venńgùs, V. Bousquet, B. Beaumont, M. Vaille, and P. Gibart, J. Appl. Phys. 87, 4175 (2000).
19. S. Gradecak, P. Stadelmann, V. Wagner and M. Ilegems, Appl. Phys. Lett. 85, 4648 (2004).
20. R. Datta and C. J. Humphreys, Phys. Status Solidi C 3, 1750 (2006).