In situ growth of c-axis-oriented La2 / 3 Sr1 / 3 MnO3 - δ thin films on Si(001)

Solid State Communications

Volumn 141, Issue 5, 2007, Pages 239-242

  Sheng, Z G ^a,b   Sun, Y P ^a,b   Zhu, X B ^a,b   Zhao, B C ^a,b   Ang, R ^a,b   Song, W H ^a,b   Dai, J M ^a,b  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A. Magnetic films; C. Crystal structure; D. Electronic transport

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; GRAIN SIZE AND SHAPE; LANTHANUM ALLOYS; MAGNETIC FILMS; MAGNETORESISTANCE; MAGNETRON SPUTTERING;

GROWTH MECHANISM; SELF ASSEMBLY GROWTH; SPIN-DEPENDENT SCATTERING;

THIN FILMS;

EID: 33845319200     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.11.008     Document Type: Article

References (15)

1. Li X.W., Gupta A., Xiao G., and Gong G.Q. Appl. Phys. Lett. 71 (1997) 1124
2. Wiedenhorst B., Höfener C., Lu Y., Klein J., Alff L., Gross R., Freitag B.H., and Mader W. Appl. Phys. Lett. 74 (1999) 3636 references therein
3. Reversat L., Crozat P., Lyonnet R., Dupas C., and Contour J.-P. Appl. Phys. Lett. 83 (2003) 2596
4. Jiang J.C., Meletis E.I., and Gnanasekar K.I. Appl. Phys. Lett. 80 (2002) 4831
5. Srinivasan G., Suresh Babu V., and Seehra M.S. Appl. Phys. Lett. 67 (1995) 2090
6. Zhang W., Boyd I.W., Cohen N.S., Bui Q.-T., and Pankhaurst Q.A. Appl. Surf. Sci. 109-110 (1997) 350
7. Liu S.M., Zhu X.B., Yang J., Zhao B.C., Sheng Z.G., Song W.H., Dai J.M., and Sun Y.P. Physica B 353 (2004) 238
8. Gu J.Y., Kwon C., Robson M.C., Trajanovic Z., Ghosh K., Sharma R.P., Shreekala R., Rajeswari M., Venkatesan T., Ramesh R., and Noh T.W. Appl. Phys. Lett. 70 (1997) 1763
9. Shreekala R., Rajeswari M., Ghosh K., Goyal A., Gu J.Y., Kwon C., Trajanovic Z., Boettcher T., Greene R.L., Ramesh R., and Venkatesan T. Appl. Phys. Lett. 71 (1997) 282
10. Kuffer O., and Fischer Ø. J. Appl. Phys. 97 (2005) 104103
11. Boubekeur H., Hopfner J., Mikolajick T., Dehm C., Frey L., and Ryssel H. J. Electrochem. Soc. 147 (2000) 4297
12. Dong Z.W., Ramesh R., Venkatesan T., Johnson M., Chen Z.Y., Pai S.P., Talyansky V., Sharma R.P., Shreekala R., Lobb C.J., and Greene R.L. Appl. Phys. Lett. 71 (1997) 22
13. Bardal A., Matthée Th., Wecker J., and Samwer K. J. Appl. Phys. 75 (1994) 2902
14. Hu X.M., Li H., Liang Y., Wei Y., Yu Z., Marshall D., Edwards Jr. J., Droopad R., Zhang X., Demkov A.A., Moore K., and Kulik J. Appl. Phys. Lett. 82 (2003) 203
15. Hu Y.F., Si W.D., Sutter E., and Li Q. Appl. Phys. Lett. 86 (2005) 082103