Interface trap characterization and Fermi level pinning in Si-passivated Ge/HfO2 capacitors

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 27-32

  Martens, K ^a,b   Kaczer, B ^a   Roussel, Ph J ^a   Groeseneken, G ^a,b   Maes, H E ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; FERMI LEVEL; INTERFACES (MATERIALS); MOSFET DEVICES; PASSIVATION;

CONDUCTION BAND; DENSITY EXTRACTION; PINNING;

CAPACITORS;

EID: 33845269058     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209252     Document Type: Conference Paper

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