Efficient fabrication and characterization of cobalt nanoparticles embedded in metaloxidesemiconductor structures for the application of nonvolatile memory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2636-2639

  Yang, Jung Yup ^a   Yoon, Kap Soo ^a   Choi, Won Joon ^a   Do, Young Ho ^a   Kim, Ju Hyung ^a   Kim, Chae Ok ^a   Hong, Jin Pyo ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; LASER BEAM EFFECTS; MOS CAPACITORS; NONVOLATILE STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE-VOLTAGE MEASUREMENTS; FLATBAND VOLTAGE SHIFT; MOS STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 33845267735     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2366612     Document Type: Article

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