Al/La2O3 analysis of post metallization annealed MISFETs by XPS

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 239-247

  Kuroki, Yusuke ^a   Ng, Jin Aun ^a   Kakushima, Kuniyuki ^a   Sugii, Nobuyuki ^b   Tsutsui, Kazuo ^b   Iwai, Hiroshi ^a  

^a Frontier Collaborative Research Center   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; HEAT TREATMENT; LANTHANUM COMPOUNDS; METALLIZING; X RAY PHOTOELECTRON SPECTROSCOPY;

FLATBAND SHIFT; GATE ELECTRODES; OXYGEN VACANCIES; POST METALLIZATION ANNEAL (PMA);

MISFET DEVICES;

EID: 33845249458     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209273     Document Type: Conference Paper

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