Optical studies on a coherent InGaN/GaN layer

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 452-457

  Correia, M R ^a   Pereira, S ^a,b   Alves, E ^c   Arnaudov, B ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

Defect levels; InGaN alloys; Photoluminescence

Indexed keywords

ENERGY ABSORPTION; ENERGY GAP; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

BLUE EMISSION; DEFECT LEVELS; ENERGY SEPARATION; INGAN ALLOYS;

THIN FILMS;

EID: 33845221929     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.004     Document Type: Article

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