The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 727-731

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Lokshin, M ^a   Hall, S ^b   Buiu, O ^b   Mitrovic, I Z ^b   El Mubarek, H A W ^c   Ashburn, P ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

1 f noise; SiGe HBT; SOI; Stress

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY;

1/F NOISE; BASE CURRENT; SIGE HBT; SPECTRAL DENSITY;

SPURIOUS SIGNAL NOISE;

EID: 33845208227     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.029     Document Type: Article

References (5)

1. Lukyanchikova N., Garbar N., Petrichuk M., Schiz J.F.W., and Ashburn P. IEEE Trans Electron Dev 48 (2001) 2808
2. Lukyanchikova N., Garbar N., Smolanka A., Lokshin M., Hall S., Buiu O., et al. IEEE Trans Electron Dev 52 (2005) 1468
3. Niu G., Jin Zh., Cressler J.D., Rapeta R., Joseph A.J., and Harame D. IEEE J Solid-State Circuits 36 (2001) 1424
4. Van der Ziel A. Physica 48 (1970) 242
5. Eer Nisse E.P. Appl Phys Lett 30 (1997) 290