EUV lithography

Comptes Rendus Physique

Volumn 7, Issue 8, 2006, Pages 875-886

  Kemp, Kevin ^a   Wurm, Stefan ^a  

^a SEMATECH   (United States)

Author keywords

EUV lithography; EUV mask; EUV optics; EUV resist; EUV source

Indexed keywords

EID: 33845206670     PISSN: 16310705     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.crhy.2006.10.002     Document Type: Short Survey

References (50)

1. Hawryluk A.M., and Seppala L.G. J. Vac. Sci. Technol. B 6 (1988) 2162
2. Silfvast W.T., and Wood II O.R. Microelectron. Eng. 8 (1988) 3
3. Kinoshita H., et al. J. Vac. Sci. Technol. B 7 (1989) 1648
4. Bjorkholm J.E., et al. J. Vac. Sci. Technol. B 8 (1990) 1509
5. Tichenor D.A., et al. Opt. Lett. 16 (1991) 1557
6. Nguyen K.B., et al. 1996 OSA TOPS on Extreme Ultraviolet Lithography vol. 4 (1996), Optical Society of America
7. S. Wurm, C.W. Gwyn, EUV lithography, in: K. Suzuki (Ed.), Microlithography, second ed., CRC Press/Taylor & Francis Informa Group, Boca Raton, FL, 2007 (Chapter 8), in press
8. Tichenor D.A., et al. Proc. SPIE 4688 (2001) 19
9. SEMATECH Inc., USA. http://www.sematech.org
10. Ma A., et al. Proc. SPIE 5751 (2005) 168
11. Lowack K., et al. Proc. SPIE 6151 (2006) 61512U-1
12. Microelectronics Development for European Applications+ (MEDEA+), France. http://www.medeaplus.org
13. Interuniversity MicroElectronics Center (IMEC), Belgium. http://www.imec.be
14. Association of Super-Advanced Electronics Technologies (ASET), Japan. http://www.aset.or.jp
15. Extreme UltraViolet Lithography System Development Association (EUVA), Japan. http://www.euva.or.jp
16. Semiconductor Leading Edge Technologies (SELETE). http://www.selete.co.jp/
17. International Technology Roadmap for Semiconductors. http://public.itrs.net/
18. Borodovsky Y. Proc. SPIE 6153 (2006) 615301-1
19. Yan P.-Y. Masks for extreme ultraviolet lithography. In: Rizvi S. (Ed). Handbook of Photomask Manufacturing Technology (2005), CRC Press/Taylor & Francis Informa Group, Boca Raton, FL (Chapter 11)
20. In: Bakshi V. (Ed). EUV Sources for Lithography vol. PM149 (2006), SPIE Press, Bellingham, WA
21. 4th International Extreme Ultra-Violet Lithography (EUVL) Symposium, San Diego, CA, November 7-9, 2005. The symposium materials can be found at. http://www.sematech.org/meetings/archives.htm
22. Goldberg K.A., et al. Proc. SPIE 5900 (2005) 114
23. Rocca J.J., et al. Proc. SPIE 5919 (2005) 1
24. N. Harned, et al., Progress on the realization of EUV lithography, in Ref. [21]
25. S. Bajt, et al., Oxidation resistance and microstructure of Ru-capped extreme ultraviolet lithography multilayers, Journal of Microlithography, Microfabrication, and Microsystems, in press
26. T.E. Madey, et al., Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography, Applied Surface Science, in press
27. Attwood D. Soft X-Rays and Extreme Ultraviolet Radiation (1999), Cambridge Univ. Press, Cambridge, UK
28. SEMATECH EUV Source Workshops 2000-2005. All workshop material can be found at http://www.sematech.org/meetings/archives.htm
29. Pankert J., et al. Proc. SPIE 6151 (2006) 61510Q-1
30. Stamm U., et al. Proc. SPIE 6151 (2006) 61510O-1
31. SEMI P37-1102, Specification for Extreme Ultraviolet Lithography Mask Substrates, Semiconductor Equipment and Materials International, San Jose, CA, 2002
32. SEMI P38-1103, Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks, Semiconductor Equipment and Materials International, San Jose, CA, 2003
33. EUV Mask Carrier Standards Workshop, San Diego, CA, November 10, 2005. The workshop materials can be found at. http://www.sematech.org/meetings/archives.htm
34. U. Mickan, et al., The first full-field EUV mask ready for printing, in: 23rd European Mask and Lithography Conference, Dresden/Germany, 23-26 January 2006
35. Rastegar A., et al. Removing sub-50 nm particles during blank substrate cleaning. Solid State Technol. 49 4 (2006) 47
36. Gullikson E.M., et al. J. Vac. Sci. Technol. B 20 (2002) 81
37. Stivers A.R., et al. Proc. SPIE 4889 (2002) 408
38. Gullikson E.M., et al. Proc. SPIE 5374 (2004) 791
39. Shroff Y.A., et al. Proc. SPIE 6151 (2006) 615104-1
40. K. Orvek, et al., Concept demonstration of integrated particle defect control of EUVL masks, in Ref. [21]
41. B. La Fontaine, T. Wallow, B. Philips, Results from AMD work on EUV resist development, private communication
42. M. Leeson, et al., EUV resist: Sensitivity, resolution, and LWR targets, in Ref. [21]
43. R. Gontin, EUV source requirements, in: SEMATECH EUV Source Workshop, Santa Clara, CA, March 3, 2002
44. Hudyma R., Chandhok M., and Shell M. Resolution limits of EUV projection technology, in: 2006 SEMATECH Litho Forum, Vancouver, May 23, 2006. The SEMATECH Litho Forum materials can be found at. http://www.sematech.org/meetings/archives.htm
45. Hudyma R. Proc. SPIE 4832 (2002) 137
46. Lord Rayleigh. Philos. Mag. 8 (1879) 261
47. Levinson H.J. Principles of Lithography (2001), SPIE Press, Bellingham, WA
48. Wong A.K.-K. Resolution Enhancement Techniques (2001), SPIE Press, Bellingham, WA
49. Gil D., et al. Proc. SPIE 6154 (2006) 615405-1
50. C. Noelscher, et al., Double line shrink lithography-patterning beyond optical limits, in: 31st International Conference on Micro- and Nano-Engineering, Vienna, Austria, 19-22 September 2005