Compact model methodology for dual-stress nitride liner films in a 90nm SOI ULSI technology

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 858-859

  Williams, R Q ^a   Chidambarrao, U ^a   McCullen, J H ^a   Narasimha, S ^a   Mitchell, T G ^a   Onsongo, D ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33845203124     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Yang, et al., IEDM 2004, pg. 1075.
2. Habitz, et al., IBM Micronews, Vol. 7, No. 1, pg. 32.
3. UCB BSIMPD version 2.2.3 compact model, 2002.
4. Na, et al., IEDM 2002, pg. 124.