Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Ray, S K ^a   Groom, K M ^a   Alexander, R ^a   Kennedy, K ^a   Liu, H Y ^a   Hopkinson, M ^a   Hogg, R A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GAIN SPECTRA; MULTI-DOT-IN-WELL STACK; SUPERLUMINESCENT LIGHT EMITTING DIODES (SLED);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33845199394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2365387     Document Type: Article

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