Deep ultraviolet detection dynamics of AlGaN based devices

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Mazzeo, G ^a   Conte, G ^a   Reverchon, J L ^b   Dussaigne, A ^c   Duboz, J Y ^c  

^a ROMA TRE UNIVERSITY   (Italy)

^b THALES RESEARCH AND TECHNOLOGY   (France)

^c CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; EXCIMER LASERS; LASER BEAM EFFECTS; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES;

DECAY KINETICS; EXCIMER LASER RADIATION; JUNCTION CAPACITANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33751570892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397019     Document Type: Article

References (10)

1. R. Korde and J. Geist, Appl. Opt. 26, 5284 (1987).
2. K. D. Stock, Inst. Phys. Conf. Ser. 92, 167 (1988).
3. M. H. Jones and S. H. Jones, Optical Properties of Silicon, Virginia Semiconductor, Inc., August 2002.
4. G. Mazzeo, J.-L. Reverchon, J.-Y. Duboz, and A. Dussaigne, IEEE Sens. J. 6, 957 (2006).
5. J. P. Long, S. Varadaraajan J. Matthewes, and J. F. Schetzina, Opto-Electron. Rev. 10, 251 (2002).
6. M. Mosca, J.-L. Reverchon, N. Grandjean, and J.-Y. Duboz, IEEE J. Sel. Top. Quantum Electron. 10, 752 (2004).
7. R. Muller and T. Kamins, Device Electronics for Integrated Circuits (Wiley, New York, 2002), p. 228.
8. R. H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, New York, 1992), p. 45.
9. M. Stutzmann, M. C. Rossi, and M. S. Brandt, Phys. Rev. B 50, 11592 (1994).
10. L. S. Pan, D. R. Kania, P. Pianetta, and O. L. Landen, Appl. Phys. Lett. 57, 623 (1990).