Thermoelectric properties of vapor-grown polycrystalline cubic SiC

Inorganic Materials

Volumn 42, Issue 11, 2006, Pages 1205-1209

  Ivanova, L M ^a   Aleksandrov, P A ^a   Demakov, K D ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751516777     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168506110069     Document Type: Article

References (14)

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2. Magomedov, M.-R, Gadzhiev, G.G., Ismailov, Sh.M., and Omarov, Z.M., SiC-AlN Ceramics: Promising Materials for High-Temperature Thermoelectric Converters, VI Mezhgosudarstvennyi seminar "Termoelektriki i ikh primenenie" (VI Int. Seminar on Thermoelectrics and Their Applications), St. Petersburg, 1999, pp. 252-256.
3. Gnesin, G.G., Karbidokremnievye materialy (Silicon Carbide Materials), Moscow: Metallurgiya, 1977.
4. Golikova, O.A., Ivanova, L.M., Pletyushkin, A.A., and Semenenko, V.I., Electrical Properties of Heavily Nitrogen Doped β-SiC, Fiz. Tekh. Poluprovodn. (Leningrad), 1971, vol. 5, no. 3, pp. 417-420.
5. Ivanova, L.M. and Pletyushkin, A.A., Preparation of Polycrystalline Silicon Carbide via Thermal Decomposition of Methyltrichlorosilane, in Karbid kremniya (stroenie, svoistva i oblasti primeneniya) (Silicon Carbide: Structure, Properties, and Application Areas), Kiev: Naukova Dumka, 1966, pp. 151-158.
6. Pletyushkin, A.A., Ivanova, L.M., and Zhuravel', M.S., Doping of Polycrystalline β-SiC during Vapor Phase Growth, Elektron. Tekh., Ser. Mater., 1970, no. 2, pp. 48-51.
7. Pletyushkin, A.A., Ivanova, L.M., Zverev, B.I., and Krasivina, L.E., Boron Doping of Pyrolytic Beta Silicon Carbide during Vapor Phase Growth, in Svoistva legirovannykh poluprovodnikov (Properties of Doped Semiconductors), Moscow: Nauka, 1977, pp. 58-61.
8. Petrov, A.V., Techniques for Measuring High-Temperature Thermal Conductivity of Semiconductors, in Termoelektricheskie svoistva poluprovodnikov (Thermoelectric Properties of Semiconductors), Moscow: Akad. Nauk SSSR, 1963, pp. 27-35.
9. Vasilevskaya, L.S., Kondrashina, A.I., Zhukova, L.K., et al., Determination of Impurities in Silicon Carbide and Methyltrichlorosilane, III Vsesoyuznaya konferentsiya po poluprovodnikovomu karbidu kremniya (III All-Union Conf. on Semiconductor Silicon Carbide), Moscow: Akad. Nauk SSSR/GIREDMET, 1970, pp. 246-257.
10. Laptev, A.V. and Ivanova, L.M., Infrared Reflection of Polycrystalline 3C-SiC, Neorg. Mater., 1994, vol. 30, no. 8, pp. 1040-1042
11. [Inorg. Mater. (Engl. Transl.), vol. 30, no. 8, pp. 960-962].
12. Ivanova, L.M., Kon'ev, I.M., and Botvina, L.R., Mechanical Properties of Polycrystalline 3C-SiC, Neorg. Mater., 1995, vol. 31, no. 9, pp. 1204-1208
13. [Inorg. Mater. (Engl. Transl.), vol. 31, no. 9, pp. 1101-1104].
14. Slack, G.A., Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond, J. Appl. Phys., 1964, vol. 35, no. 12, pp. 3460-3466.