Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography

Microelectronic Engineering

Volumn 84, Issue 1, 2007, Pages 21-24

  Yang, Ki Yeon ^a   Hong, Sung Hoon ^a   Kim, Deok kee ^a   Cheong, Byung ki ^b   Lee, Heon ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Ge2Sb2Te5; Nano imprint lithography; Phase change material; PRAM

Indexed keywords

AMORPHIZATION; CRYSTALLIZATION; ELECTRIC POTENTIAL; ETCHING; GERMANIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; PHASE TRANSITIONS; SILICA; SILICON WAFERS; SPUTTERING;

NANO IMPRINT LITHOGRAPHY (NIL); PHASE CHANGE MATERIALS; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); RADIO FREQUENCY SPUTTERING;

RANDOM ACCESS STORAGE;

EID: 33751417291     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.07.004     Document Type: Article

References (11)

1. Shin Y.-S. Symp. VLSI Tech. Dig. (2005) 156
2. Okuda M., Naito H., and Matsushita T. Jpn. J. Appl. Phys. 31 (1992) 466
3. Lai S., and Lowrey T. IEDM Tech. Dig. 180 (2001) 803
4. Lai S. IEDM Tech. Dig. (2003) 255
5. Pirovano A., Redaelli A., Pellizzer F., Ottogalli F., Tosi M., Ielmini D., et al. IEEE Trans. Dev. Mater. Reliab. (2004) 422
6. Pirovano A., Lacaita A.L., Benvenuti A., Pellizzer F., Hudgens S., and Bez R. IEDM Tech. Dig. (2003) 699
7. Haisma J., Verheijan M., and Heuvel K. J. Vac. Sci. Technol. B 14 (1996) 4214
8. Jung G.Y., Ganapathiappan S., Li X., Ohlberg D.A.A., Olynick D.L., Chen Y., Tong W.M., and Williams R.S. Appl. Phys. A 7 (2004) 1169
9. Jung G.Y., Li Z., Wu W., Ganapathiappan S., Li X., Olynick D.L., Wang S.Y., Tong W.M., and Stanley Williams R. Langmuir 21 (2005) 6127
10. Lee H., and Young G.Y. Microelectronic. Eng. 77 (2005) 42
11. Matsutani A., Koyama F., and Iga K. Jpn. J. Appl. Phys. 37 (1998) 6655