Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 89-92

  Akarvardar, K ^a   Cristoloveanu, S ^a   Dufrene, B ^b   Gentil, P ^a   Schrimpf, R D ^c   Blalock, B J ^d   Chroboczek, J A ^a   Mojarradi, M ^e  

^a IMEP LAHC   (France)

^b IBM   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d UNIVERSITY OF TENNESSEE   (United States)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; INTEGRATED CIRCUITS; RADIATION EFFECTS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

ANALOG CIRCUITS; CONDUCTION CHANNEL; DRAIN CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 33751416106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546592     Document Type: Conference Paper

References (5)

1. K. Akarvardar, S. Cristoloveanu, P. Gentil, B. J. Blalock, B. Dufrene and M. M. Mojarradi, "Depletion-All-Around in SOI G4-FETs: a Conduction Mechanism with High Performance," ESSDERC Proceedings, 217, (2004).
2. 4-FETs," IEEE Trans. Electron Devices, 51, 1931, (2004).
3. S. Cristoloveanu and S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices, Kluwer Academic Publishers (1995).
4. T. Elewa, B. Boukriss, H. S. Haddara, A. Chovet and S. Cristoloveanu, "Low-Frequency Noise in Depletion-Mode SIMOX Transistors," IEEE Trans. Electron Devices, 38, 323, (1991).
5. J. A. Felix, J. R. Schwank, C. R. Cirba, R. D. Schrimpf, M. R. Shaneyfelt, D. M. Fleetwood and P. E. Dodd, "Influence of Total-Dose Radiation on the Electrical Characteristics of MOSFETs," Microelectronic Engineering, 72, 332, (2004).