Terahertz technology: Devices and applications

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 13-22

  Shur, Michael ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC FIELD EFFECTS; HIGH ELECTRON MOBILITY TRANSISTORS; NATURAL FREQUENCIES; POLARIZATION; RESONANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CUTOFF FREQUENCIES; PHOTONICS; PLASMA RESONANCE; TERAHERTZ TECHNOLOGY;

HETEROJUNCTIONS;

EID: 33751401067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546574     Document Type: Conference Paper

References (57)

1. G.L. Carr, M.C. Martin, W.R. McKinney, G.R. Neil, K. Jordan and G.P. Williams. "High Power Terahertz Radiation from Relativistic Electrons". Nature, 420: 153 (2002).
2. M. S. Shur and L. F. Eastman, Ballistic Transport in Semiconductors at Low-Temperatures for Low Power High Speed Logic, IEEE Transactions Electron Devices, Vol. ED-26, No. 11, pp. 1677-1683, November (1979)
3. From http://www.teraview.com/ab_imageLibrary.asp
4. From Science Vol. 297, 2 Aug. 2002
5. From:http://www.jpl.nasa.gov/news/news.cfm?release=2004-291
6. Yunqing Chen, Haibo Liu, Michael J. Fitch, Robert Osiander, James B. Spicer, Michael Shur, X.-C. Zhang, THz diffuse reflectance spectra of selected explosives and related compounds, Proceedings of SPIE Volume: 5790, Terahertz for Military and Security Applications III, Editor(s): R. Jennifer Hwu, Dwight L. Woolard, and Mark J. Rosker, to be published
7. H.-T. Chen, G.C. Cho, and R. Kersting. Appl. Phys. Lett. 83, 3009 (2003).
8. www.virginiadiodes.com
9. M. Smith, S. J. Liu, M. Y. Kao, P. Ho, S. C. Wang, K. H. G. Duh, S. T. Fu, and P. C. Chao, "W-band high-efficiency InP-based power HEMT with 600 GHz fmax," IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995
10. Mark J. W. Rodwell (Editor), High Speed Integrated Circuit Technology: Towards 100 GHZ Logic, World Scientific (2001)
11. W. Hafez and M. Feng. Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz. Applied Physics Letters 86, April 11, p. 152101 (2005)
12. W. Knap, F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, F. Bouef, T. Skotnicki, D. Maude, S. Rumyantsev and M. S. Shur, Plasma Wave Detection of Millimeter Wave Radiation by Silicon Field Effect Transistors, Appl. Phys. Lett, Vol. 85, No 4, pp. 675-677 26 July (2004)
13. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller,. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, and E. Müller, Science, pp. 2277-2280, Dec 22 2000
14. R. Kohler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti, and F. Rossi, Nature 417, 156-159 (2002).
15. B. S. Williams, S. Kumar, Q. Hu, and J. L. Reno, "Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode," Optics Express, 13, 3331-3339 (2005)
16. Giacomo Scalari Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist, Terahertz bound-to-continuum quantum-cascade lasers based on optical phonon scattering extraction, Applied Physics Letters, 86, 181101 (2005)
17. G. Scalari, S. Blaser, J. Faist, H. Beere, E. Linfield, D. Ritchie, and G. Davies, Phys. Rev. Lett. 93, 237403 (2004)
18. http://www.lasercomponents.de/wwwuk/products/quantum/main.htm
19. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, E. Müller, Science 290, 2277 (2000)
20. M. S. Kagan, I. V. Altukhov, E.G. Chirkova, K. A. Korolev, V. P. Sinis, R. T. Troeger, S. K. Ray, and J. Kolodzey, Proc. 10th Int. Symp. Nanostructures: Physics and TechnologyÓ, St. Petersburg, Russia, 445 (2002)
21. E. R. Brown, Terahertz generation by photomixing in ultrafast photoconductors, in Terahertz Sensing Technology, Volume II. World Scientific (2003) Edited by D. Woolard, W. Loerop, and M. S. Shur
22. T. Otsuji, M. Hanabe, and O. Ogawara, Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high electron mobility transistors, Applied Physics Letters, Vol. 85, No 11, 13 September p. 2119 (2004)
23. www.CoherentInc.com
24. www.picometrics.com
25. www.teraview.co.uk
26. D. H. Auston, K.P. Cheung, J.A. Valdmanis, and D.A. Kleinman, D.A. Phys. Rev. Lett. 53, 1555-1558 (1984)
27. X.-C. Zhang, Terahertz technology and applications, Short Course, SPIE Photonic West, San Jose, CA, January 2005
28. http://www.jlab.org/FEL/terahertz/
29. http://www.bell-labs.com/news/1999/december/6/1.html
30. http://www.itrs.net/Common/2004Update/2004_00_Overview.pdf
31. Dyakonov M. I. and Shur M. S., Phys. Rev. Lett. 71, 2465, 1993
32. M. S. Shur and V. Ryzhii, New Concepts for Submillimeter-Wave Detection and Generation, in Proceedings of 11-Th GaAs Symposium, pp. 301-304, Munich, October (2003)
33. Y. Deng, R. Kersting, J. Xu, R. Ascazubi, X. C. Zhang, M. S. Shur, R. Gaska, G. S. Simin and M. A. Khan, and V. Ryzhii Millimeter Wave Emission from GaN HEMT, Appl. Phys. Lett. Vol. 84, No 15, pp. 70-72, January 2004
34. V. Ryzhii and M. S. Shur, Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plasma Oscillations in High-Electron Mobility Transistors. Jpn. J. Appl. Phys. Vol.41, No.8B, pp. L922-L924 (2002)
35. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V. Popov, and M. S. Shur, Emission of terahertz radiation by plasma waves in 60 nm AlInAs/InGaAs high electron mobility transistors, Appl. Phys. Lett. 84, No 13, 2331-2333, March 29 (2004)
36. N. Dyakonova, F. Teppe, J. Lusakowski, W. Knap, M. Levinshtein, V. Kachorovskii, A. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors, J. Appl. Phys. To be published
37. J. Lusakowski, F. Teppe, N. Dyakonova, Y. M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov, M. S. Shur, Terahertz generation by plasma waves in nanometer gate high electron mobility transistors, physica status solidi (a), Volume 202, Issue 4, Date: March 2005, Pages: 656-659
38. V. V. Popov, O. V. Polischuk, and M. S. Shur, Resonant Excitation of plasma oscillations in a partially gated two-dimensional electron layer, J. Appl. Phys., to be published
39. M. Dyakonov and M. S. Shur, Current Instability of Plasma Waves Generation in Ungated Two Dimensional Electron Layers, Appl. Phys. Lett., submitted for publication
40. M. Dyakonov and M. S. Shur, IEEE Trans. Electron Dev. 43, 1640 (1996)
41. J.-Q. Lu, M. S. Shur, J. L. Hesler, L. Sun, and R. Weikle, Terahertz Detector Utilizing Two-Dimensional Electronic Fluid, IEEE Electron Device Letters, Vol. 19, No. 10, pp. 373-375, October (1998)
42. R. Weikle, J. Lu, M. S. Shur, M. I. Dyakonov, Detection of Microwave Radiation by Electronic Fluid in High Electron Mobility Transistors, Electronics Letters, Vol. 32, No. 23, pp. 2148-2149 (1996)
43. J.-Q. Lu, M. S. Shur, J. L. Hesler, L. Sun, and R. Weikle II, A Resonant Terahertz Detector Utilizing a High Electron Mobility Transistor, IEDM Technical Digest, pp. 879-882, San Francisco, CA (1998)
44. X. G. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, J. A. Simmons, M. P. Lilly, J. L. Reno, P. J. Burke, J. P. Eisenstein, Appl. Phys. Lett., vol. 81, No 9, pp. 1627-1629, August (2002)
45. X. Peralta, S. J. Allen, M. C. Wanke, N. E. Harff, M. P. Lilly, J. A. Simmons, J. L. Reno, P. J. Burke, J. P. Eisenstein, W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lü, M. S. Shur, International Journal of High Speed Electronics and Systems, Vol. 12, No. 3 pp. 925-937 (2002)
46. W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field effect transistors, Appl. Phys. Lett., 81, 4637 December(2002)
47. J.-Q. Lu and M.S. Shur, Terahertz Detection by High Electron Mobility Transistor: Effect of Drain Bias, Applied Phys. Lett., Vol. 78, No. 17, pp. 2587-2588, April 23 (2001)
48. F. Teppe, D. Veksler, V. Yu. Kachorovskii, A. P. Dmitriev, S. Rumyantsev, W. Knap, and M.S. Shur, Room temperature Plasma Waves Resonant Detection of sub-Terahertz Radiation by Nanometer Field Effect Transistor, Appl. Phys. Lett., to be published
49. D. Veksler, F. Teppe, A. P. Dmitriev, V.Yu. Kachorovskii, M. S. Shur, Detection of terahertz radiation in gated two-dimensional structures governed by dc current, submitted to Physical Review, B
50. Y. Deng, W. Knap, S. Rumyantsev, R. Gaska, A. Khan, V. Ryzhii, E. Kaminska, A. Piotrowska, J. Lusakowski, and M. S. Shur, "Subterahertz Detection by High Electron Mobility Transistors at Large Forward Gate Bias", 2002 IEEE Lester Eastman Conference on High Performance Devices, August 6-8, 2002, University of Delaware, Newark, DE 19716, IEEE Catalog Number 02CH37365, ISBN 0-7803-7478-9, pp. 135-142
51. N. Pala, F. Teppe, D. Veksler, Y. Deng, M.S. Shur, R. Gaska, Nonresonant detection of terahertz radiation by Silicon-On-Insulator MOSFETs, Electronics Letters, Vol. 41 No. 7, 31st March 2005
52. Mark Lee, M. C. Wanke, and J. L. Reno, Millimeter wave mixing using plasmon and bolometric response in a double-quantum-well field-effect transistor, Applied Physics Letters, 86, 033501 (2005)
53. V. Ryzhii, I. Khmyrova, and M. Shur, J. Appl. Phys., vol. 91, pp. 1875-1881, 2002
54. V. Ryzhii, I. Khmyrova, A. Satou, P. O. Vaccaro, T. Aida, and M. Shur, J. Appl. Phys., vol. 92, pp. 5756-5760, 2002.
55. V. Ryzhii, I. Khmyrova, and M. S. Shur, Proc. SPIE, vol. 5118, 2003
56. V.Yu. Kachorovskii and M.S. Shur, Polari-zation induced electron island in semiconductor grain placed into pyroelectric matrix, Appl. Phys. Lett. 84, 2340-2342 March 29 (2004)
57. V.Yu. Kachorovskii and M.S. Shur, Electron and hole moveable islands in pyroelectric/semiconductor granular systems, Appl. Phys. Lett. 86(1) 12101 (03 Jan 2005)