The use of segregated hydrofluoroethers in semiconductor wafer processing

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn 2006, Issue , 2006, Pages 296-300

  Clark, Philip G ^a   Zazzera, Lawrence A ^a  

^a 3M COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIELECTRIC DEVICES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SOLVENTS;

ETCH RATE; HYDROFLUOROETHERS (HFE); PLASMA ASH; SEMICONDUCTOR WAFER PROCESSING;

ETHERS;

EID: 33751396644     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2006.1638772     Document Type: Conference Paper

References (5)

1. P.G. Clark, et al., "Cleaning and Restoring k Value of Porous MSQ Films," Semiconductor International, Vol. 26(9), 2003, p. 42.
2. J. Kehren, "HFEs Offer a Cost-Effective, Environmentally Safe Alternative to Aqueous Cleaning," Data Storage, April 2001.
3. O. Raccurt, et al., "Influence of Liquid Surface Tension on Stiction of SOI MEMS," Journal of Micromechanics and Microengineering, Vol. 14, 2004, p. 1083.
4. M.J. Parent, et al., "Low Surface Tension Etch Solutions for Silicon Dioxide Removal in Microelectromechanical Systems," Microfabricated Systems and MEMS V, Electrochemical Society Proceedings, 2000.
5. I.L. Berry, et al., "Use of Plasma Assisted Sublimation to Remove Photoresist from Porous Low-k Dielectrics," SEMI® Technical Symposium: Innovations in Semiconductor Manufacturing, 2004.