Modeling of hydrogen diffusion in silicon crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 118-121

  Saad, Anis ^a   Velichko, O I ^b   Shaman, Yu P ^b   Mazanik, A V ^c   Fedotov, A K ^c   Fedotova, V V ^c  

^a AL BALQA APPLIED UNIVERSITY   (Jordan)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^c BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Defects; Diffusion; Hydrogen; Plasma processing; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTALLOGRAPHY; DEFECTS; DIFFUSION; PLASMA SOURCES; SILICON;

CHARGE STATES; DIFFUSION EQUATIONS; PLASMA PROCESSING;

HYDROGEN;

EID: 33751351385     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.016     Document Type: Article

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