Homoepitaxial CVD diamond: Raman and time-resolved PL characterization

Diamond and Related Materials

Volumn 15, Issue 11-12 SPEC. ISS., 2006, Pages 1976-1979

  Chiorboli, M ^a   Donato, M G ^b   Faggio, G ^b   Marinelli, Marco ^c   Messina, G ^b   Milani, E ^c   Potenza, R ^a   Santangelo, S ^b   Scoccia, M ^c   Tuve C ^a   Verona Rinati, G ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b Dipartimento di Meccanica e Materiali   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Defect characterization; Homoepitaxy; Photoluminescence; Raman spectroscopy

Indexed keywords

EPITAXIAL GROWTH; MEASUREMENT THEORY; MICROWAVES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY;

DEFECT CHARACTERIZATION; HOMOEPITAXY; MICROWAVE POWER; RAMAN MEASUREMENTS;

DIAMONDS;

EID: 33751328797     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.07.014     Document Type: Article

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