Channel material optimization for the ultimate planar and nanowire MOSFETs: A theoretical exploration

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 241-242

  Wang, Jing ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; MATHEMATICAL MODELS; MODEMS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SILICON COMPOUNDS;

BOLTZMANN TRANSPORT EQUATION (BTE); NANOWIRE FET; QUANTUM TRANSPORT;

MOSFET DEVICES;

EID: 33751318014     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553139     Document Type: Conference Paper

References (4)

1. A. Rahman et al., TED 50, 1853 (2003). URL: www.nanohub.org.
2. S. Datta, Electronic Transport in Mesoscopic Systems, Cambridge Press (1997).
3. Z. Ren et al., TED 50,1914 (2003).
4. J. Wang et al., IEDM 695 (2003).