Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 199-200

  Zhao, Wei ^a   Seabaugh, Alan ^a   Winstead, Brian ^b   Jovanovic, Dejan ^b   Adams, Vance ^b  

^a University of Notre Dame   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RING OSCILLATORS; ULTRA-THIN GATE DIELECTRICS; UNIAXIAL STRAIN;

DIELECTRIC DEVICES; LEAKAGE CURRENTS; OSCILLATORS (ELECTRONIC); POWER CONTROL; STRAIN; TENSILE STRENGTH;

MOSFET DEVICES;

EID: 33751311556     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553119     Document Type: Conference Paper

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