Effect of partial replacement of Bi on electrical properties of layer structured strontium bismuth titanate

Ferroelectrics

Volumn 324, Issue , 2005, Pages 145-151

  Raghavender, M ^a   Kumar, G S ^a   Vithal, M ^a   Prasad, G ^a  

^a OSMANIA UNIVERSITY   (India)

Author keywords

BLSF material; Dielectric constant; Electrical conductivity; La doped; SrBi4Ti4O15

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; LAYERED MANUFACTURING; PERMITTIVITY; SOL-GELS; STRONTIUM COMPOUNDS; SYNTHESIS (CHEMICAL);

BLSF MATERIAL; LA DOPED; LATTICE DISTORTION; STRONTIUM BISMUTH TITANATE;

BISMUTH;

EID: 33751284308     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190500324931     Document Type: Article

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