Study of high-k dielectric insulation layers for organic TFT and characteristics of TFT

Ferroelectrics

Volumn 328, Issue , 2005, Pages 111-115

  Park, S S ^a   Ryu, M K ^a   Heo, J Y ^a   Cho, D H ^a   Kim, S H ^b   Yang, Y S ^b   Kim, J P ^c   Jang, M S ^a  

^a Pusan National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

High k; OTFT; SBN; TFT

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC INSULATION; FERROELECTRIC THIN FILMS; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; STRONTIUM COMPOUNDS; THIN FILM TRANSISTORS;

CAPACITANCE-FREQUENCY MEASUREMENTS; ORGANIC THIN FILM TRANSISTORS (OTFT); ROUGHNESS MEASUREMENTS;

AMORPHOUS MATERIALS;

EID: 33751264426     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190500311409     Document Type: Article

References (7)

1. C.D. Shrew, J. A. Nichols, D. J. Gundlach, J. R. Huang, C. C. Kuo, H. Klauk, and T. N. Jackson, In 58th Device Research Conference Digest, 2000, p.107
2. H. Klauk, D. J. Gundlach, M. Bonse, C. C. Kuo, and T. N. Jackson, Appl. Phys. Lett. 75 1692 (2000).
3. H. Klauk, D. J. Gundlach, and T. N. Jackson, IEEE Electron Dev. Lett. 20, 289 (1999).
4. S. M. Zanetti, E. B. Araujo, E. R. Leite, E. Longo, and J. A. Varela, Mat. Lett. 40, 33 (1999).
5. N. Kaiser, H. Uhlig, U. B. Schallenberg, B. Anton, U. Kaiser, K. Mann, and E. Eva, Thin Solid Films 260, 82 (1995).
6. R. -S. Zhou and R. L. Synder, Acta Crystallogr. B 47, 617 (1990).
7. M. Matters, D. M. de Leeuw, M. J. C. M. Vissenderg, C. M. Hart, P. T. Herwig, T. Geuns, C. M. J. Mutsaers, and C. J. Drury. Ptic. Mat. 12, 189 (1999).