Electroless deposition of CoWP: Material characterization and process optimization on 300 mm wafers

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2082-2087

  Decorps, T ^a   Haumesser, P H ^b   Olivier, S ^b   Roule, A ^b   Joulaud, M ^c   Pollet, O ^c   Avale, X ^c   Passemard, G ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c Semitool Incorporated   (United States)

Author keywords

65 nm node; Copper orientation dependence; Electrical performances; Electroless process; Selective metallic diffusion barriers

Indexed keywords

CHARACTERIZATION; COPPER; DIELECTRIC PROPERTIES; ELECTROLESS PLATING; GRAIN GROWTH; INTERCONNECTION NETWORKS;

65 NM NODE; COPPER ORIENTATION DEPENDENCE; ELECTRICAL PERFORMANCES; SELECTIVE METALLIC DIFFUSION BARRIERS;

COBALT COMPOUNDS;

EID: 33751248780     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.012     Document Type: Article

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