Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2094-2100

  Chhun, S ^a,b   Gosset, L G ^a   Michelon, J ^c   Girault, V ^d   Vitiello, J ^a   Hopstaken, M ^a   Courtas, S ^a   Debauche, C ^e,f   Bancken, P H L ^c   Gaillard, N ^d   Bryce, G ^a   Juhel, M ^d   Pinzelli, L ^d   Guillan, J ^d   Gras, R ^d   Van Schravendijk, B ^e,f   Dupuy, J C ^b   Torres, J ^d  

^a NXP SEMICONDUCTORS   (Netherlands)

^b UNIVERSITÉ DE LYON   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d STMICROELECTRONICS   (France)

^e Novellus System Inc   (France)

^f NOVELLUS SYSTEMS INC   (United States)

Author keywords

Cleaning plasma; Copper interconnects; Cu crystallographic orientation; CuSiN; Electromigration; Self aligned barrier; Silicidation

Indexed keywords

ADSORPTION; COPPER; COPPER COMPOUNDS; DIELECTRIC MATERIALS; ELECTROMIGRATION; GRAIN BOUNDARIES; SELF ASSEMBLY; SILICON;

CLEANING PLASMA; COPPER INTERCONNECTS; CU CRYSTALLOGRAPHIC ORIENTATION; CUSIN; SELF ALIGNED BARRIERS; SILICIDATION;

SURFACE TREATMENT;

EID: 33751224788     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.013     Document Type: Article

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