A new threshold voltage model and prediction of property of MFIS structure

Integrated Ferroelectrics

Volumn 64, Issue , 2004, Pages 39-49

  Chen, Yuanqi ^a   Yinyinlin, ^a   Tang, Ting Ao ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; FERROELECTRIC THIN FILMS; MATHEMATICAL MODELS; SATURATION (MATERIALS COMPOSITION);

FERROELECTRIC FILMS; HYSTERESIS LOOP; MFIS STRUCTURES;

THRESHOLD VOLTAGE;

EID: 33751159421     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490893556     Document Type: Article

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