Chemical mechanical polishing of aluminum for the 0.18 μm dual damascene process

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 70-72

  Kordic, S ^a   Mutsaers, C A H ^a   Lifka, H ^a   Webster, M N ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; INTEGRATED CIRCUIT INTERCONNECTS; POLISHING;

APPLIED MATERIALS; CMP TOOLS; COMB STRUCTURE; DAMASCENE LINES; DUAL DAMASCENE PROCESS; END POINT DETECTION;

CHEMICAL MECHANICAL POLISHING;

EID: 33751123630     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704754     Document Type: Conference Paper

References (4)

1. "Chemical mechanical planarization of microelectronic materials", J. M. Steigerwald, S. P. Murarka and R. J. Gutmann, 1997, Wiley, New York.
2. s. Kordic, "Chemical mechanical polishing of aluminum", Applied Materials European Technology Seminar, Munich, Germany, 1997.
3. T. Licata et al, "Dual damascene AI wiring for 256M DRAM", in Proc. VMIC, pp 596-602, 1995.
4. s. Kordic, "Reliability of aluminum interconnects", 9th Schumacher's Annual Dielectrics and CVD Metallization Symp., San Diego, CA, 1997.