90nm split-gate nanocrystal non-volatile memory with reduced threshold voltage

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 60-61

  Yater, Jane A ^a   Kirichenko, T ^a   Prinz, E J ^a   Sadd, M ^a   Steimle, R ^a   Swift, C T ^a   Chang, K M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751069267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629494     Document Type: Conference Paper

References (8)

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4. F. Ito et al., VLSI Symposium Tech. Dig., pp. 80-81, 2004.
5. L. Breuil et al., IEEE TED, vol. 52, pp. 2250-7, Oct. 2005.
6. T. Osabe et al., VLSI Symposium Tech. Dig., pp. 242-3, 2004
7. C. Swift et al., NVSMW this proceeding.
8. M. Sadd et al, Proc. of IEEE NVSWM, p. 82, 2001.