NeoFlash® - True logic single poly flash memory technology

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 15-16

  Lee, H M ^a   Woo, S T ^b   Chen, H M ^a   Shen, R ^a   Wang, C D ^b   Hsia, L C ^b   Hsu, C C H ^a  

^a EMEMORY TECHNOLOGY INC   (Taiwan)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; COMPUTER SYSTEMS PROGRAMMING; FORMAL LOGIC; LOGIC DESIGN; PROCESS CONTROL; RELIABILITY;

LOW COST LOGIC; POLY FLASH MEMORY; SONOS; UNIFORM CHANNEL TUNNELING ERASURE;

FLASH MEMORY;

EID: 33751043399     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629476     Document Type: Conference Paper

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