New cell structure with edge-thick tunnel oxide for highly reliable NAND flash memory devices

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 38-39

  Kim, Tae Kyung ^a   Song, Jaihyuk ^a   Lee, Changsub ^a   Oh, Dongyean ^a   Jang, Taeseok ^a   Lim, Jongkwang ^a   Lee, Dongjun ^a   Lee, Seungjun ^a   Lim, Minhwan ^a   Shim, Hyunyoung ^a   Park, Bongtae ^a   Lee, Man Ki ^a   Lee, Hunkook ^a   Jo, Sangyeon ^a   Lee, Woonkyung ^a   Choi, Jeonghyuk ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751041476     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629484     Document Type: Conference Paper

References (2)

1. Jae-Duk Lee et al., Reliability Phy. Sympo. Proc., pp. 497-501, 2003
2. Masataka Kato et al., IEDM Tech. Dig., pp. 45-48, 1994