Novel buried bitline integration for compact cell design in high-performance embedded flash memory with deep trench isolation

21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Volumn 2006, Issue , 2006, Pages 21-23

  Tilke, A T ^a   Pescini, L ^b   Stiftinger, M ^c   Kakoschke, R ^c   Shum, D ^a   Chan, N ^d   Kim, S R ^d   Han, K J ^d  

^a INFINEON TECHNOLOGIES   (United States)

^b Infineon Technologies Dresden GmbH and Co OHG   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d Actel Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751034361     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2006.1629478     Document Type: Conference Paper

References (2)

1. C. Li et al, IEDM Tech. Dig. 2000, p.779.
2. D. Shum et al., IEDM Tech. Dig. 2005 (S14P3).