Depth-resolved X-ray determination of surface strain in free-standing films of HVPE-grown GaN and 71Ga NMR characterization

Applied Physics A: Materials Science and Processing

Volumn 86, Issue 1, 2007, Pages 67-71

  Mahadik, N A ^a   Qadri, S B ^a   Rao, M V ^a   Yesinowski, J P ^b  

^a George Mason University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; GALLIUM NITRIDE; LATTICE CONSTANTS; NUCLEAR MAGNETIC RESONANCE; STRAIN MEASUREMENT; SURFACE PROPERTIES; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

ANISOTROPIC STRAIN; CENTRAL TRANSITION PEAK; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SURFACE STRAIN ANISOTROPY;

FILM GROWTH;

EID: 33750995259     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-006-3726-6     Document Type: Article

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