A log-based flash translation layer for large NAND flash memory

8th International Conference Advanced Communication Technology, ICACT 2006 - Proceedings

Volumn 3, Issue , 2006, Pages 1641-1644

  Kim, Soo Young ^a   Jung, Sung In ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Hybrid mapping FTL; Large NAND flash memory; Log block; Log based FTL; LogFTL; Replacement block

Indexed keywords

ALGORITHMS; EMBEDDED SYSTEMS; MOBILE TELECOMMUNICATION SYSTEMS; NAND CIRCUITS; PROBLEM SOLVING;

FLASH TRANSLATION LAYER (FTL); HYBRID MAPPING FTL; LARGE NAND FLASH MEMORY; LOG BLOCK; REPLACEMENT BLOCK;

FLASH MEMORY;

EID: 33750929596     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Samsung Electronics Company, "K9F1GXXX0M 128M x 8 bit/64M x 16 bit NAND flash memory data sheet", 2003
2. Amir Ban, "Flash file system", United States Patent, no. 5,404,485., 1995
3. Amir Ban, "Flash file system optimized for page-mode flash technologies", United States Patent, no. 5,937,425., 1999.
4. Takayuki Shinohara, "Flash memory card with block memory address arrangement", United States Patent, no. 5,905,993., 1999.
5. Jesung Kim, Jong Min Kim, Sam H. Noh, Sang Lyul Min, and Yookun Cho, "A space-efficient flash translation layer for compactflash systems", IEEE Transactions on Consumer Electronics, 48(2), 2002