Pressure sensor based on Si3N4 membrane and the compensation

Dianzi Qijian/Journal of Electron Devices

Volumn 29, Issue 3, 2006, Pages 726-729

  Wang, Qi ^a,b   Zhao, Zhan ^a   Zeng, Huan Huan ^a,b   Fang, Zhen ^a,b   Zhang, Bo Jun ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Compensation; MEMS; Pressure sensor; Si3N4; Temperature

Indexed keywords

EID: 33750927028     PISSN: 10059490     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)