-
1
-
-
0035872897
-
High-K gate dielectrics: Current status and materials properties considerations
-
269
-
G. D. Wilk, R. M. Wallace, J. M. Anthony: High-K gate dielectrics: Current status and materials properties considerations, J. Appl. Phys. 89, 5243-5275 (2001) 269
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243-5275
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
2
-
-
1642618690
-
2 and other high-k alternative gate dielectrics for advanced CMOS devices
-
269
-
2 and other high-k alternative gate dielectrics for advanced CMOS devices, Microelectron. Eng. 72, 257-262 (2004) 269
-
(2004)
Microelectron. Eng.
, vol.72
, pp. 257-262
-
-
Hinkle, C.L.1
Lucovsky, G.2
-
3
-
-
10844282779
-
High dielectric constant oxides
-
269, 270
-
J. Robertson: High dielectric constant oxides, Eur. Phys. J. Appl. Phys. 28, 265-291 (2004) 269, 270
-
(2004)
Eur. Phys. J. Appl. Phys.
, vol.28
, pp. 265-291
-
-
Robertson, J.1
-
4
-
-
0035504954
-
Effective electron mobility in Si inversion layers in metal/oxide/semiconductor systems with a, high-k insulator: The role of remote phonon scattering
-
269
-
M. V. Fischetti, D. A. Neumayer, E. A. Cartier: Effective electron mobility in Si inversion layers in metal/oxide/semiconductor systems with a, high-k insulator: The role of remote phonon scattering, J. Appl. Phys. 90, 4587 (2001) 269
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 4587
-
-
Fischetti, M.V.1
Neumayer, D.A.2
Cartier, E.A.3
-
5
-
-
0035858356
-
2 insulators
-
270, 275, 276
-
2 insulators, Appl. Phys. Lett. 78, 3073-3075 (2001) 270, 275, 276
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 3073-3075
-
-
Afanas'Ev, V.V.1
Houssa, M.2
Stesmans, A.3
Heyns, M.M.4
-
6
-
-
4944251364
-
2 and SrO and the associated valence band offsets with Si(001)
-
270, 272, 273
-
2 and SrO and the associated valence band offsets with Si(001), J. Vac. Sci. Technol. B 22, 2205-2215 (2004) 270, 272, 273
-
(2004)
J. Vac. Sci. Technol. B
, vol.22
, pp. 2205-2215
-
-
Chambers, S.A.1
Droubay, T.2
Kaspar, T.C.3
Gutowski, M.4
-
8
-
-
0001124734
-
Photoemission of electrons from silicon into silicon dioxide
-
270
-
R. Williams: Photoemission of electrons from silicon into silicon dioxide, Phys. Rev. 140, A 569-A 575 (1965) 270
-
(1965)
Phys. Rev.
, vol.140
-
-
Williams, R.1
-
9
-
-
36049054194
-
Photoemission of electrons from silicon and gold into silicon dioxide
-
270
-
A. Goodman: Photoemission of electrons from silicon and gold into silicon dioxide, Phys. Rev. 144, 588-593 (1966) 270
-
(1966)
Phys. Rev.
, vol.144
, pp. 588-593
-
-
Goodman, A.1
-
10
-
-
0010565182
-
Photoemission of holes from silicon into silicon dioxide
-
270
-
A. M. Goodman: Photoemission of holes from silicon into silicon dioxide, Phys. Rev. 152, 780-784 (1966) 270
-
(1966)
Phys. Rev.
, vol.152
, pp. 780-784
-
-
Goodman, A.M.1
-
11
-
-
0343571755
-
Photoemission of electrons from n-type degenerate silicon into silicon dioxide
-
270
-
A. M. Goodman: Photoemission of electrons from n-type degenerate silicon into silicon dioxide, Phys. Rev. 152, 785-787 (1966) 270
-
(1966)
Phys. Rev.
, vol.152
, pp. 785-787
-
-
Goodman, A.M.1
-
12
-
-
0014789335
-
Interface barrier energy determination from voltage dependence of photoinjected currents
-
270, 271
-
R. J. Powell: Interface barrier energy determination from voltage dependence of photoinjected currents, J. Appl. Phys. 41, 2424-2432 (1970) 270, 271
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 2424-2432
-
-
Powell, R.J.1
-
13
-
-
0015145303
-
Photoinjection studies of charge distributions in oxides of MOS structures
-
270
-
R. J. Powell, C. N. Berglund: Photoinjection studies of charge distributions in oxides of MOS structures, J. Appl. Phys. 42, 4390-4397 (1971) 270
-
(1971)
J. Appl. Phys.
, vol.42
, pp. 4390-4397
-
-
Powell, R.J.1
Berglund, C.N.2
-
14
-
-
0015008323
-
2: Electron scattering in the image force potential well
-
270
-
2: electron scattering in the image force potential well, J. Appl. Phys. 42, 573-579 (1971) 270
-
(1971)
J. Appl. Phys.
, vol.42
, pp. 573-579
-
-
Berglund, C.N.1
Powell, R.J.2
-
15
-
-
0000343237
-
Internal photoemission spectroscopy of semiconductor-insulator interfaces
-
271
-
V. K. Adamchuk, V. V. Afanas'ev: Internal photoemission spectroscopy of semiconductor-insulator interfaces, Prog. Surf. Sci. 41, 111-211 (1992) 271
-
(1992)
Prog. Surf. Sci.
, vol.41
, pp. 111-211
-
-
Adamchuk, V.K.1
Afanas'Ev, V.V.2
-
16
-
-
11044239234
-
3/silicon structures
-
271, 275, 276
-
3/silicon structures, Appl. Phys. Lett. 85, 5316-5318 (2004) 271, 275, 276
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 5316-5318
-
-
Seguini, G.1
Bonera, E.2
Spiga, S.3
Scarel, G.4
Fanciulli, M.5
-
17
-
-
0001111922
-
Photoemission measurements of interface barrier energies for tunnel oxides on silicon
-
271
-
P. V. Dressendorfer, R. C. Barker: Photoemission measurements of interface barrier energies for tunnel oxides on silicon, Appl. Phys. Lett. 36, 933-935 (1980) 271
-
(1980)
Appl. Phys. Lett.
, vol.36
, pp. 933-935
-
-
Dressendorfer, P.V.1
Barker, R.C.2
-
18
-
-
33845392078
-
3
-
271, 275
-
3, J. Appl. Phys. 91, 3079-3084 (2002) 271, 275
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 3079-3084
-
-
Afanas'Ev, V.V.1
Houssa, M.2
Stesmans, A.3
Heyns, M.M.4
-
19
-
-
33646198048
-
Precise determination of the valence-band edge in X-ray photoemission spectra: Application to measurements of semiconductor interface potentials
-
272, 273
-
E. A. Kraut, R. W. Grant, J. R. Waldrop, S. P. Kowalczyk: Precise determination of the valence-band edge in X-ray photoemission spectra: Application to measurements of semiconductor interface potentials, Phys. Rev. Lett. 44, 1620-1623 (1980) 272, 273
-
(1980)
Phys. Rev. Lett.
, vol.44
, pp. 1620-1623
-
-
Kraut, E.A.1
Grant, R.W.2
Waldrop, J.R.3
Kowalczyk, S.P.4
-
20
-
-
33646171801
-
Semiconductor core level to valence-band maximum binding-energy differences: Precise determination by X-ray photoelectron spectroscopy
-
272, 273
-
E. A. Kraut, R. W. Grant, J. R. Waldrop, S. P. Kowalczyk: Semiconductor core level to valence-band maximum binding-energy differences: Precise determination by X-ray photoelectron spectroscopy, Phys. Rev. B 28, 1965-1977 (1983) 272, 273
-
(1983)
Phys. Rev. B
, vol.28
, pp. 1965-1977
-
-
Kraut, E.A.1
Grant, R.W.2
Waldrop, J.R.3
Kowalczyk, S.P.4
-
21
-
-
0031547317
-
2 thermally grown on Si(100) and Si(111) surfaces
-
272, 273
-
2 thermally grown on Si(100) and Si(111) surfaces, Appl. Surf. Sci. 114/114, 585-589 (1997) 272, 273
-
(1997)
Appl. Surf. Sci.
, vol.114
, pp. 585-589
-
-
Miyazaki, S.1
Nishimura, H.2
Fukuda, M.3
Ley, L.4
Ristein, J.5
-
22
-
-
33744685518
-
Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors
-
273
-
J. R. Chelikowsky, M. L. Cohen: Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors, Phys. Rev. B 14, 556 (1976) 273
-
(1976)
Phys. Rev. B
, vol.14
, pp. 556
-
-
Chelikowsky, J.R.1
Cohen, M.L.2
-
23
-
-
0035498454
-
Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy
-
273
-
S. Miyazaki, M. Narasaki, M. Ogasawara, M. Hirose: Characterization of ultrathin zirconium oxide films on silicon using photoelectron spectroscopy, Microelectron. Eng. 59, 373-378 (2001) 273
-
(2001)
Microelectron. Eng.
, vol.59
, pp. 373-378
-
-
Miyazaki, S.1
Narasaki, M.2
Ogasawara, M.3
Hirose, M.4
-
24
-
-
0035519201
-
Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
-
273, 275
-
S. Miyazaki: Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics, J. Vac. Sci. Technol. B 19, 2212-2216 (2001) 273, 275
-
(2001)
J. Vac. Sci. Technol. B
, vol.19
, pp. 2212-2216
-
-
Miyazaki, S.1
-
25
-
-
0000014710
-
x (0 ≤ x ≥ 2) alloys
-
273
-
x (0 ≤ x ≥ 2) alloys, Phys. Rev. B 37, 8383-8393 (1988) 273
-
(1988)
Phys. Rev. B
, vol.37
, pp. 8383-8393
-
-
Bell, F.G.1
Ley, L.2
-
27
-
-
1642603312
-
Photoelectron spectroscopy of ultrathin yttrium oxide films on Si(100)
-
275
-
A. Ohta, M. Yamaoka, S. Miyazaki: Photoelectron spectroscopy of ultrathin yttrium oxide films on Si(100), Microelectron. Eng. 72, 154-159 (2004) 275
-
(2004)
Microelectron. Eng.
, vol.72
, pp. 154-159
-
-
Ohta, A.1
Yamaoka, M.2
Miyazaki, S.3
-
28
-
-
12144287611
-
Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) intefacial transition layer
-
275
-
T. Hattori, T. Yoshida, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai: Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) intefacial transition layer, Microelectron. Eng. 72, 283-287 (2004) 275
-
(2004)
Microelectron. Eng.
, vol.72
, pp. 283-287
-
-
Hattori, T.1
Yoshida, T.2
Shiraishi, T.3
Takahashi, K.4
Nohira, H.5
Joumori, S.6
Nakajima, K.7
Suzuki, M.8
Kimura, K.9
Kashiwagi, I.10
Ohshima, C.11
Ohmi, S.12
Iwai, H.13
-
31
-
-
10844252200
-
2/Si, SiGe, and Ge intefaces
-
275, 277
-
2/Si, SiGe, and Ge intefaces, Appl. Phys. Lett. 85, 4418-4420 (2004) 275, 277
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4418-4420
-
-
Wang, S.J.1
Huan, A.C.H.2
Foo, Y.L.3
Chai, J.W.4
Pan, J.S.5
Li, Q.6
Dong, Y.F.7
Feng, Y.P.8
Ong, C.K.9
-
32
-
-
79956051787
-
2
-
275, 276
-
2, Appl. Phys. Lett. 81, 1053-1055 (2002) 275, 276
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 1053-1055
-
-
Afanas'Ev, V.V.1
Stesmans, A.2
Chen, F.3
Shi, X.4
Campbell, S.A.5
-
34
-
-
19944362147
-
2/p-Si gate stacks
-
275
-
2/p-Si gate stacks, J. Appl. Phys. 96, 7485-7491 (2004) 275
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 7485-7491
-
-
Sayan, S.1
Emge, T.2
Garfunkel, E.3
Zhao, X.4
Wielnnski, L.5
Bartynski, A.6
Vanderbilt, D.7
Suehle, J.S.8
Suzer, S.9
Banaszak-Holl, M.10
-
35
-
-
20444433980
-
2/Si system
-
275
-
2/Si system, Appl. Phys. Lett. 85, 6155-6157 (2004) 275
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 6155-6157
-
-
Li, Q.1
Wang, S.J.2
Li, K.B.3
Huan, A.C.H.4
Chai, J.W.5
Pan, J.S.6
Ong, C.K.7
-
36
-
-
17044428586
-
y high-k dilectric layers
-
275
-
y high-k dilectric layers, Appl. Phys. Lett. 86, 072108-1-072108-3 (2005) 275
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 721081-721083
-
-
Afanas'Ev, V.V.1
Stesmans, A.2
Zhao, C.3
Caymax, M.4
Rittersma, Z.M.5
Maes, J.W.6
-
38
-
-
0032384361
-
Energy barriers and trapping centers in silicon metal-insulators- semiconductor structures with samarium and ytterbium oxide insulators
-
275
-
V. A. Rozhkov, A. Y. Trusova, I. G. Berezhnoi: Energy barriers and trapping centers in silicon metal-insulators-semiconductor structures with samarium and ytterbium oxide insulators, Tech. Phys. Lett. 24, 217-219 (1998) 275
-
(1998)
Tech. Phys. Lett.
, vol.24
, pp. 217-219
-
-
Rozhkov, V.A.1
Trusova, A.Y.2
Berezhnoi, I.G.3
-
39
-
-
4043136447
-
0.6 insulators
-
275, 278
-
0.6 insulators, Appl. Phys. Lett. 85, 597-599 (2004) 275, 278
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 597-599
-
-
Afanas'Ev, V.V.1
Stesmans, A.2
Passlack, M.3
Medendorp, N.4
-
40
-
-
17744390392
-
Band alignment between (100)Si and complex rare earth/transition metal oxides
-
275
-
V. V. Afanas'ev, A. Stesmans, C. Zhao, M. Caymax, T. Heeg, J. Schubert, Y. Jia, G. Schlom, G. Lucovsky: Band alignment between (100)Si and complex rare earth/transition metal oxides, Appl. Phys. Lett. 85, 5917-5919 (2004) 275
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 5917-5919
-
-
Afanas'Ev, V.V.1
Stesmans, A.2
Zhao, C.3
Caymax, M.4
Heeg, T.5
Schubert, J.6
Jia, Y.7
Schlom, G.8
Lucovsky, G.9
-
41
-
-
1242308912
-
3 and silicon
-
275
-
3 and silicon, Appl. Phys. Lett. 84, 726-728 (2004) 275
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 726-728
-
-
Edge, L.F.1
Schlorn, D.G.2
Chambers, S.A.3
Cicerrella, E.4
Freeout, J.L.5
Holländer, B.6
Schubert, J.7
-
42
-
-
33646896809
-
-
Unpublished 275
-
7/Si(001) interface, Unpublished (2005) 275
-
(2005)
7/Si(001) Interface
-
-
Seguini, G.1
Spiga, S.2
Bonera, E.3
Fanciulli, M.4
Reyes Huamantinco, A.5
Forst, C.J.6
Ashman, C.R.7
Blöchl, P.E.8
Dimoulas, A.9
Mavrou, G.10
-
43
-
-
4043099571
-
3
-
274, 277
-
3, Appl. Phys. Lett. 85, 630-632 (2004) 274, 277
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630-632
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
-
45
-
-
24944444330
-
2 films grown by atomic layer deposition on Ge
-
277
-
2 films grown by atomic layer deposition on Ge, Appl. Phys. Lett. 87, 112904-1-3 (2005) 277
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 1129041-1129043
-
-
Spiga, S.1
Wiemer, C.2
Tallarida, G.3
Scarel, G.4
Ferrari, S.5
Seguini, G.6
Fanciulli, M.7
-
47
-
-
33750812808
-
-
Private Communication 277
-
3 on Ge, Private Communication (2005) 277
-
(2005)
3 on Ge
-
-
Seguini, G.1
-
48
-
-
33750812808
-
-
Private Communication 278
-
3 on GaAs, Private Communication (2005) 278
-
(2005)
3 on GaAs
-
-
Seguini, G.1
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