HfO2 nano-thin films grown by laser MBE for gate dielectric application

NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

Volumn 2006, Issue , 2006, Pages 273-277

  Lu, Y K ^a   Zhu, W ^a   Zhang, Y ^b   Lu, H ^a   Gopalkrishnan, R ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANJING UNIVERSITY   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Gate dielectrics; Hafnium oxide; Laser MBE

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS; HAFNIUM OXIDES; LASER MBE;

THIN FILMS;

EID: 33750833737     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANOEL.2006.1609728     Document Type: Conference Paper

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