Influnce of Sulphur content on the optical properties of glassy S xSe100-x thin films system

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 5, 2006, Pages 1817-1822

  El Nahass, M M ^a   El Den, M B ^a   El Sayed, H E A ^a   El Barry, A M A ^a   Seyam, M A M ^a  

^a Ain Shams University   (Egypt)

Author keywords

Optical properties; SxSe100 x; Thin films

Indexed keywords

BOND STRENGTH (CHEMICAL); FILM PREPARATION; GLASS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SUBSTRATES; SULFUR; SULFUR DETERMINATION; THERMAL EVAPORATION;

ANNEALING TEMPERATURES; DIFFERENT THICKNESS; DISPERSION ENERGIES; EFFECT OF HEAT TREATMENTS; SHORTER WAVELENGTH; SPECTROPHOTOMETRIC MEASUREMENTS; SXSE100-X; THERMAL EVAPORATION TECHNIQUE;

THIN FILMS;

EID: 33750587185     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

1. S. R. Ovshinski, Phys. Rev. Letters 21, 1450 (1968).
2. J. Tauc "Proceedings of International Conference on the Physics of Semiconductors", Plenum Press, New York 159 (1974).
3. H. Frizche "proceedings of international conference on the physics of semiconductors", Plenum Press, New York 221, 313 (1974).
4. C. De Blasi, D. Manna, G. Miccoci, Tepore J. Appl. Phys. 63, 1164 (1989).
5. V. Damodara Das, P. Jansi Lakshmi, J. Appl. Phys. 62, 2376 (1987).
6. Y. Spripathi, G. B. Reddy, L. K. Malthora, J. Mater. Sci. Letters 2, 109 (1991).
7. N. D. Baro, N. Clavaguera, S. Surinach, C. Barta, N. Rysava, A. Triska, J. Mater. Sci. 26, 3680 (1991).
8. L. A. Wahab, M. B. El Den, M. S. Youssef, Egypt J. Sol. 32(1), 71 (2000).
9. Z. K. Heiba, M. B. El Den, Karimat El Sayed, J. Powder Diff. 17(3), 186 (2002).
10. S. Tolansky, "Multiple-beam Interference microscopy of metals". London: Academic Press, 55 (1970).
11. M. M. El-Nahas, J. Mater. Sci 27, 6597 (1992).
12. Y. Laaziz, A. Bennouna, N. Chahboun, A. Outzourhit, thin solid films 372, 149 (2000).
13. J. M. Bennet, M. J. Booty, Appl. Opt 5, 41 (1966).
14. A. EL-Shazly, H. el-Shair, M. J. el-Nahass, Optics 12(1), 6 (1983).
15. O. Z. Murman, Phys. 101, 161 (1936).
16. A. Hruby, Stourac, Mat. Res. Bull, 6, 465 (1971).
17. J. Schotmiller, M. Tabac, G. Lucovsky, J. Ward, No.Cryst.Solids, 4, 80 (1970).
18. N. F. Mott, E. A. Davis, "Electronic processes in Non -crystalline materials" Clare don press Oxford, ch:10(1971).
19. M. F. Kotkata, S. A. Nouh, L. Fakas, M. M. Radwan, J. Material, sci 27, 1785 (1992).
20. Set 31 of the powder differaction file JCPDS.International center for diffraction Data :5 (8-247), se(6-0362) and ses (2- 032) 1998.
21. S. G. Tomlin, E. Khawaja. G. K. M. Thhutupalli, J. Phys. C: Solid State Phys. 9, 4335 (1976).
22. Pfister and Scher, Bull. Am. phys. Soc, 20 (1975).
23. M. B. Myers, E. J. Felty, Mat. Res. Bull. 2, 535 (1967);
24. Jauc J "Amorphous and liquid semiconductors", Plenum Press, New York 1974: 159.
25. A. Tobolsky, G. Owen, J. Polymer Sci. 59, 329 (1962).
26. S. H. Wemple, M. Didomenico, phys. Rev. lett. 23, 20, 1156 (1969).
27. W. G. Spitzer, J. M. Whelan, phys. Rev. 114, 59 (1959).
28. G. A. Kumar, J. Thomas, N. George, B. A. Kumar, P. Radhokrishman, V. P. N. Nampoori, C. P. G. Vallabhan, J. Phys. Chem. Glasses 41(2), 89 (2000).
29. H. Kawazoc, H. Hosono, Leanazawa, J. Non-Crystalline Solids 29, 159 (1975).
30. N. F. Mott, E. A. Davis "Electronic Processes in Non-Crystalline Materials", Clarendon Press, Oxford, Ch. 10, 1970.
31. H. T. EL-Shair, A. E. Bekheet, J. Phys. D: Appl. Phys. 25, 1122(1992).