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Volumn 6297, Issue , 2006, Pages
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Performance comparisons of InGaAs, extended InGaAs, and short-wave HgCdTe detectors between 1 μm and 2.5 μm
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Author keywords
Extended InGaAs; Infrared detectors; InGaAs; MCT; NEP; Noise; Responsivity; Shunt resistance; Temperature dependence
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Indexed keywords
BANDGAP WAVELENGTH;
RESPONSIVITY;
SHUNT RESISTANCE;
TEMPERATURE DEPENDENCE;
AMPLIFICATION;
MERCURY COMPOUNDS;
PHOTOCURRENTS;
PHOTODIODES;
PYROELECTRICITY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
THERMOELECTRIC EQUIPMENT;
INFRARED DETECTORS;
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EID: 33750543372
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.684614 Document Type: Conference Paper |
Times cited : (45)
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References (7)
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