Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

Electronics Letters

Volumn 42, Issue 22, 2006, Pages 1286-1287

  Hirata, M ^a   Oka, T ^a   Hasegawa, M ^a   Amano, Y ^a   Ishimaru, Y ^a   Kawamura, H ^a   Sakuno, K ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; QUADRATURE AMPLITUDE MODULATION; SEMICONDUCTING GALLIUM ARSENIDE;

ERROR VECTOR; LINEAR OUTPUT POWER; MATCHING CIRCUITS;

POWER AMPLIFIERS;

EID: 33750543178     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062404     Document Type: Article

References (3)

1. Green, D.: ' RF front-end component requirements for WiMAX applications ', The Key Conference, November, 2, 2005
2. Kawamura, H., Sakuno, K., Hasegawa, T., Hasegawa, M., Koh, H., and Sato, H.: ' A miniature 44 efficiency GaAs HBT power amplifier MMIC for the W-CDMA application ', IEEE GaAs IC Symp. Tech. Dig., 2000, p. 25-28
3. Koh, H., Sakuno, K., Kawamura, H., Amano, Y., Hasegawa, M., Kagoshima, K., Shirakawa, K., Takahashi, N., Liu, Y., Oka, T., Fujita, K., Yamashita, M., Matsumoto, N., and Sato, H.: ' A high efficiency InGaP/GaAs HBT power amplifier MMIC for the 5GHz wireless-LAN application ', Proc. 32nd European Microwave Conf., September, 2002, p. 469-472