A-b Axis-oriented lanthanum doped Bi4 Ti3 O 12 thin films grown on a Ti O2 buffer layer

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Simes A Z ^a   Pianno, R F C ^a   Ries, A ^a   Varela, J A ^a   Longo, E ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); FERROELECTRIC DEVICES; LANTHANUM COMPOUNDS; POLARIZATION; SWITCHING SYSTEMS;

FERROELECTRIC DOMAIN SWITCHING; FILM DEPOSITION; REMANENT POLARIZATION; SWITCHING POLARIZATION;

THIN FILMS;

EID: 33750513457     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356096     Document Type: Article

References (10)

1. J. F. Scott and C. A. Paz de Araujo, Science 246, 1400 (1989).
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
3. Y. Shimakawa, Y. Kubo, Y. Tauchi, H. Asano, T. Kamiyama, F. Izumi, and Z. Hiroi, Appl. Phys. Lett. 79, 2791 (2001).
4. S. E. Cummins and L. E. Cross, J. Appl. Phys. 39, 2268 (1968).
5. T. Takenaka and K. Sanaka, Jpn. J. Appl. Phys. 19, 31 (1980).
6. R. Ramesh, K. Luther, B. Wilkens, D. L. Hart, E. Wang, and J. M. Trascon, Appl. Phys. Lett. 57, 1505 (1990).
7. H. Esaki, Integr. Ferroelectr. 14, 14 (1997).
8. A. Z. Simes, A. Ries, F. M. Filho, J. A. Varela, and E. Longo, Appl. Phys. Lett. 85, 5962 (2004).
9. R. R. Das, P. S. Dobal, A. Dixit, W. Perez, M. S. Tomar, R. E. Melgarejo, and R. S. Katiyar, Mater. Res. Soc. Symp. Proc. 655, CC5.6.1 (2001).
10. D. Roy, C. J. Peng, and S. P. Krupanidhi, Appl. Phys. Lett. 60, 2478 (1992).