0.15-μm-Gate InAlAs/InGaAs/InP E-HEMTs utilizing Ir/Ti/Pt/Au gate structure

IEEE Electron Device Letters

Volumn 27, Issue 11, 2006, Pages 873-876

  Kim, Seiyon ^a   Adesida, Ilesanmi ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Enhancement mode high electron mobility transistor (E HEMT); InP E HEMT; Iridium gate

Indexed keywords

ANNEALING; ENCAPSULATION; GATES (TRANSISTOR); HETEROJUNCTIONS; IRIDIUM; METALLIZING; OSCILLATIONS; PYROLYSIS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

ENHANCEMENT-MODE HIGH-ELECTRON MOBILITY TRANSISTOR (E-HEMT); GATE STRUCTURE; IRIDIUM GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33750510501     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.883563     Document Type: Article

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