Tunable anticrossing of gated and ungated plasma resonances and enhancement of interlayer terahertz electric field in an asymmetric bilayer of density-modulated two-dimensional electron gases

Solid State Communications

Volumn 140, Issue 11-12, 2006, Pages 529-532

  Popov, V V ^a   Tsymbalov, G M ^a   Horing, N J M ^b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b Stevens Institute of Technology   (United States)

Author keywords

A. Quantum wells; D. Optical properties

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; OPTICAL PROPERTIES; PLASMA FLOW; SEMICONDUCTOR QUANTUM WELLS;

ANTICROSSING; ELECTRON CHANNELS; GATE VOLTAGE; PLASMA RESONANCES;

ELECTRON GAS;

EID: 33750493890     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.09.023     Document Type: Article

References (9)

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