Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO3 ceramics

Materials Science and Engineering: A

Volumn 438-440, Issue SPEC. ISS., 2006, Pages 176-180

  Yang, Liu ^a   Liu, Wenfeng ^a   Chen, Wei ^a   Wang, Yu ^a   Cao, Xiaolong ^a   Ren, Xiaobing ^a,b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

(Pb, Sr)TiO3; Electro shape memory; Electrostrain; Ferroelectrics; Point defect symmetry

Indexed keywords

AGING OF MATERIALS; ELECTRIC FIELD EFFECTS; HYSTERESIS; SHAPE MEMORY EFFECT; STRAIN;

ELECTRO-SHAPE-MEMORY; ELECTROSTRAIN; ELECTROSTRAIN EFFECT; POINT-DEFECT SYMMETRY;

FERROELECTRIC CERAMICS;

AGING OF MATERIALS; ELECTRIC FIELD EFFECTS; FERROELECTRIC CERAMICS; HYSTERESIS; SHAPE MEMORY EFFECT; STRAIN;

EID: 33750462765     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.12.078     Document Type: Article

References (9)

1. Uchino K. Ferroelectric Device (2000), Marcel Dekker, New York
2. Haertling G.H. J. Am. Ceram. Soc. 82 4 (1999) 797-818
3. Park S.E., Wada S., Cross L.E., and Shrout T.R. J. Appl. Phys. 86 (1999) 2746
4. Ren X. Nat. Mater. 3 (2004) 91
5. Ren X., and Otsuka K. Nature (London) 389 (1997) 579
6. Zhang L.X., Chen W., and Ren X. Appl. Phys. Lett. 85 23 (2004) 5658-5660
7. Ren X., and Otsuka K. Phys. Rev. Lett. 85 (2000) 1016
8. Wang D.J., Guo C., Gui Z.L., and Li L.T. J. Chin. Ceram. Soc. 25 5 (1997) 547-553
9. Uchida N., and Ikeda T. Jpn. J. Appl. Phys. 6 (1967) 1079