Electrical resistivity of Ti-Ni binary and Ti-Ni-X (X = Fe, Cu) ternary shape memory alloys

Materials Science and Engineering: A

Volumn 438-440, Issue SPEC. ISS., 2006, Pages 536-539

  Wu, S K ^a   Lin, H C ^a   Lin, T Y ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Electrical resistivity; Martensitic transformation; Ti Ni shape memory alloys

Indexed keywords

BINARY ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; MARTENSITIC TRANSFORMATIONS; TERNARY SYSTEMS; TWINNING;

BINARY SHAPE MEMORY ALLOYS; CRYSTAL DISTORTIONS; TERNARY SHAPE MEMORY ALLOYS; TWO-STAGE TRANSFORMATION;

SHAPE MEMORY EFFECT;

BINARY ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; MARTENSITIC TRANSFORMATIONS; SHAPE MEMORY EFFECT; TERNARY SYSTEMS; TWINNING;

EID: 33750458005     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2005.12.059     Document Type: Article

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