Development of DEPFET Macropixel detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 207-216

  Zhang, Chen ^a,b,e   Lechner, Peter ^c,e   Lutz, Gerhard ^d,e   Porro, Matteo ^e,f   Richter, Rainer ^d,e   Treis, Johannes ^a,e   Strüder, Lothar ^a,e   Nan Zhang, Shuang ^b,g  

^a MAX PLANCK INSTITUT FÜR EXTRATERRESTRISCHE PHYSIK   (Germany)

^b TSINGHUA UNIVERSITY   (China)

^c PNSENSOR GMBH   (Germany)

^d MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^e MPI HALBLEITERLABOR   (Germany)

^f POLITECNICO DI MILANO   (Italy)

^g INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

DEPFET; Macropixel; Silicon Drift Detector; X ray astronomy; X ray spectroscopy

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SILICON SENSORS; SOFTWARE PROTOTYPING; X RAY SPECTROSCOPY;

ENERGY RESOLUTION; SILICON DRIFT DETECTOR(SDD); SINGLE PIXEL; X-RAY ASTRONOMY;

IMAGE SENSORS;

EID: 33750380368     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.239     Document Type: Article

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