Study of the long-term behavior of the sensitivity of amorphous silicon photo detectors under illumination

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 18-21

  Eglseer, Ludwig ^a   Horvat, Sandra ^a   Kroha, Hubert ^a  

^a MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

Author keywords

Hydrogenated amorphous silicon; Laser diodes; Long term illumination; Photo detectors; Silicon strip sensors; Staebler Wronski effect

Indexed keywords

AMORPHOUS SILICON; DIODES; LASER BEAMS; LIGHTING; SENSITIVITY ANALYSIS; SILICON SENSORS;

HYDROGENATED AMORPHOUS SILICON; LONG-TERM ILLUMINATION; SILICON STRIP SENSORS; STAEBLER-WRONSKI EFFECT;

PHOTODETECTORS;

EID: 33750304873     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.198     Document Type: Article

References (4)

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4. Bauer F., Garcia M.F., Horvat S., Kroha H., Ostapchuk A., and Schael S. IEEE Trans. Nucl. Sci. NS-48 3 (2001) 262