Analysis of repassivation kinetics of Ti based on the point defect model

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Ahn, SeJin ^a   Kim, DongYung ^b   Kwon, HyukSang ^b,c  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRODES; MATHEMATICAL MODELS; PASSIVATION; PH EFFECTS; POINT DEFECTS; REACTION KINETICS;

ELECTRIC FIELD STRENGTH; PASSIVE FILM INTERFACES; REPASSIVATION TIME; SOLUTION TEMPERATURE;

TITANIUM;

EID: 33750139188     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2220080     Document Type: Article

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