Comparison between complete and simplified methods for determining the microwave noise parameters of HEMTs

43rd ARFTG Conference Digest - Spring 1994

Volumn , Issue , 1994, Pages 121-126

  Caddeml, A ^a   Sannino, M ^a  

^a UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749980577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTG.1994.327068     Document Type: Conference Paper

References (7)

1. G. Caruso, M. Sannino, "Computer-aided determination of microwave two-port noise parameters", IEEE Trans Microwave Theor Tech., vol. MTT-26, pp. 639-642, Sept. 1978.
2. M. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence", IEEE Trans Microwave Theor Tech., vol. MTT-37, pp. 1340-1350, Sept. 1989.
3. B. Hughes, "A temperature noise model for extrinsic FETs", IEEE Trans Microwave Theor Tech., vol. MTT-40, pp. 1821-1832, Sept. 1992.
4. P. Tasker, W. Reinert, J. Braunstein, M. Schlechtweg, "Direct extraction of all four transistor noise parameters from a single noise figure measurement", Proc. 22nd European Microwave Conference, Helsinki, Finland, Aug. 1992, pp. 157-162.
5. G. Dambrine, H. Happy, F. Danneville, A. Cappy, "A new method for on wafer noise measurement", IEEE Trans Microwave Theor Tech., vol. MTT-41, pp. 375-381, March 1993.
6. E. Calandra, G. Martines and M. Sannino, "Characterization of GaAs FETs in terms of noise, gain and scattering parameters through a noise paraneter test set", IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 231-237, March 1984.
7. G. Martines and M. Sannino, "The determination of the noise, gain and scattering parameters of microwave transistors (HEMTs) using only an automatic noise figure test-set", to be published on IEEE Trans. Microwave Theory Tech., July 1994.