First-principles study of the effects of Si doping on geometric and electronic structure of closed carbon nanotube

Chinese Science Bulletin

Volumn 50, Issue 17, 2005, Pages 1823-1828

  Zhou, Junzhe ^a   Wang, Chongyu ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

Carbon nanotube; Doping; Electronic structure; Field emission

Indexed keywords

EID: 33749821457     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1360/982005-470     Document Type: Article

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