Low frequency noise sensitivity to technology induced mechanical stress in MOSFETs

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 191-194

  Fantini, Paolo ^a   Ferrari, Giorgio ^b  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

1 f noise; Aand mechanical stress; MOSFET; Strain

Indexed keywords

EID: 33749490669     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036729     Document Type: Conference Paper

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